Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition

  1. Bilousov, O.V.
  2. Carvajal, J.J.
  3. Geaney, H.
  4. Zubialevich, V.Z.
  5. Parbrook, P.J.
  6. Martínez, O.
  7. Jiménez, J.
  8. Díaz, F.
  9. Aguiló, M.
  10. O'Dwyer, C.
Aldizkaria:
ACS Applied Materials and Interfaces

ISSN: 1944-8252,  1944-8244

Argitalpen urtea: 2014

Alea: 6

Zenbakia: 20

Orrialdeak: 17954-17964

Mota: Artikulua

DOI: 10.1021/AM504786B GOOGLE SCHOLAR lock_openUVADOC editor