Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition

  1. Bilousov, O.V.
  2. Carvajal, J.J.
  3. Geaney, H.
  4. Zubialevich, V.Z.
  5. Parbrook, P.J.
  6. Martínez, O.
  7. Jiménez, J.
  8. Díaz, F.
  9. Aguiló, M.
  10. O'Dwyer, C.
Revue:
ACS Applied Materials and Interfaces

ISSN: 1944-8252,  1944-8244

Année de publication: 2014

Volumen: 6

Número: 20

Pages: 17954-17964

Type: Article

DOI: 10.1021/AM504786B GOOGLE SCHOLAR lock_openUVADOC editor