Publicacions en què col·labora amb María Susana Pérez Santos (79)

2024

  1. Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes

    IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

  2. Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 10, pp. 5609-5614

  3. Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 10, pp. 5901-5907

  4. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529

  5. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

2023

  1. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987

  2. Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings

  3. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

  4. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

    Applied Physics Express, Vol. 16, Núm. 2

2022

  1. Analysis of the low temperature behavior of GaN-on-SiC Schottky barrier diodes

    32nd International Symposium of Space Terahertz Technology, ISSTT 2022

  2. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

    Journal of Applied Physics, Vol. 132, Núm. 4

  3. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520

2021

  1. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301

  2. Non-linear thermal resistance model for the simulation of high power GaN-based devices

    Semiconductor Science and Technology, Vol. 36, Núm. 5

  3. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

2020

  1. Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 67, Núm. 9, pp. 3530-3535

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

  2. GaN-based SSD structure for THz applications

    Asia-Pacific Microwave Conference Proceedings, APMC

2018

  1. Fabrication Process of Non-Linear Planar Diodes Based on GaN

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. GaN nanodiode arrays with improved design for zero-bias sub-THz detection

    Semiconductor Science and Technology, Vol. 33, Núm. 9