Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

  1. de Dios, A.
  2. Castán, E.
  3. Bailón, L.
  4. Barbolla, J.
  5. Lozano, M.
  6. Lora-Tamayo, E.
Journal:
Solid State Electronics

ISSN: 0038-1101

Year of publication: 1990

Volume: 33

Issue: 8

Pages: 987-992

Type: Article

DOI: 10.1016/0038-1101(90)90208-V GOOGLE SCHOLAR