Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

  1. de Dios, A.
  2. Castán, E.
  3. Bailón, L.
  4. Barbolla, J.
  5. Lozano, M.
  6. Lora-Tamayo, E.
Aldizkaria:
Solid State Electronics

ISSN: 0038-1101

Argitalpen urtea: 1990

Alea: 33

Zenbakia: 8

Orrialdeak: 987-992

Mota: Artikulua

DOI: 10.1016/0038-1101(90)90208-V GOOGLE SCHOLAR