Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

  1. de Dios, A.
  2. Castán, E.
  3. Bailón, L.
  4. Barbolla, J.
  5. Lozano, M.
  6. Lora-Tamayo, E.
Revue:
Solid State Electronics

ISSN: 0038-1101

Année de publication: 1990

Volumen: 33

Número: 8

Pages: 987-992

Type: Article

DOI: 10.1016/0038-1101(90)90208-V GOOGLE SCHOLAR